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| SI1563DH New Product Vishay Siliconix Complementary 20-V (D-S) Low-Threshold MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 FEATURES rDS(on) (W) 0.280 @ VGS = 4.5 V 0.360 @ VGS = 2.5 V 0.450 @ VGS = 1.8 V 0.490 @ VGS = -4.5 V ID (A) 1.28 1.13 1.00 -1.00 -0.81 -0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package D Fast Switching APPLICATIONS D Load Switch for Portable Devices P-Channel -20 0.750 @ VGS = -2.5 V 1.10 @ VGS = -1.8 V D1 S2 SOT-363 SC-70 (6-LEADS) S1 1 6 D1 Marking Code EB G1 2 5 G2 XX YY G1 Lot Traceability and Date Code Part # Code S1 N-Channel Top View D2 P-Channel G2 D2 3 4 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID IDM IS 0.61 0.74 0.38 P-Channel 5 secs Steady State -20 "8 V -0.88 -0.63 -3.0 A -0.48 0.57 0.3 W _C Symbol VDS VGS 5 secs Steady State 20 "8 Unit 1.28 0.92 4.0 1.13 0.81 - 1.00 -0.72 0.48 0.57 0.30 -55 to 150 -0.61 0.30 0.16 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71963 S-21483--Rev. A, 26-Aug-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W C/W 1 SI1563DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 mA VDS = VGS, ID = -100 mA VDS = 0 V, VGS = "8 V " VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = -16 V, VGS = 0 V, TJ = 85_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 1.13 A VGS = -4.5 V, ID = -0.88 A Drain-Source On-State Resistancea VGS = 2.5 V, ID = 0.99 A rDS(on) VGS = -2.5 V, ID = -0.71 A VGS = 1.8 V, ID = 0.20 A VGS = -1.8 V, ID = -0.20 A Forward Transconductancea VDS = 10 V, ID = 1.13 A gfs VDS = -10 V, ID = -0.88 A IS = 0.48 A, VGS = 0 V VSD IS = -0.48 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 2 -2 0.220 0.400 0.281 0.610 0.344 0.850 2.6 1.5 0.8 -0.8 1.2 -1.2 V S 0.280 0.490 0.360 0.750 0.450 1.10 W A 0.45 -0.45 1 V 1 "100 "100 1 -1 5 -5 mA m nA Symbol Test Condition Min Typ Max Unit Gate-Body Leakage IGSS Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A Gate-Source Charge Qgs P-Channel VDS = -10 V, VGS = -4.5 V, ID = -0.88 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -10 V, RL = 20 W ID ^ -0.5 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time tf P-Ch IF = 0.48 A, di/dt = 100 A/ms m N-Ch P-Ch 1.25 1.2 0.21 nC 0.3 0.3 0.21 15 18 22 25 25 15 12 12 30 30 25 30 35 40 40 25 20 20 60 60 ns 2 1.8 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Reverse Recovery Time trr Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71963 S-21483--Rev. A, 26-Aug-02 SI1563DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 2.0 VGS = 5 thru 2 V 2.0 TC = -55_C 1.5 I D - Drain Current (A) 1.5 V 25_C Vishay Siliconix N-CHANNEL Transfer Characteristics 1.5 I D - Drain Current (A) 125_C 1.0 1.0 0.5 1V 0.0 0 1 2 3 4 0.5 0.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 160 Capacitance r DS(on) - On-Resistance ( W ) 0.5 C - Capacitance (pF) 120 Ciss 80 0.4 VGS = 1.8 V VGS = 2.5 V VGS = 4.5 V 0.3 0.2 40 0.1 Crss 0.0 0.0 0 0.5 1.0 ID - Drain Current (A) 1.5 2.0 0 4 Coss 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1.28 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W) (Normalized) 4 1.4 VGS = 4.5 V ID = 1.13 A 1.2 2 1.0 1 0.8 0 0.0 0.3 0.6 0.9 1.2 1.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71963 S-21483--Rev. A, 26-Aug-02 www.vishay.com 3 SI1563DH Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.6 TJ = 150_C r DS(on) - On-Resistance ( W ) 1 I S - Source Current (A) TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 2 0.5 0.4 ID = 1.13 A 0.3 TJ = 25_C 0.2 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 100 mA 5 Single Pulse Power, Junction-to-Ambient 0.1 V GS(th) Variance (V) 4 -0.0 Power (W) 3 -0.1 2 -0.2 1 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 10 IDM Limited rDS(on) Limited I D - Drain Current (A) 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 1 P(t) = 10 dc P(t) = 0.0001 P(t) = 0.001 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 71963 S-21483--Rev. A, 26-Aug-02 SI1563DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N-CHANNEL 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71963 S-21483--Rev. A, 26-Aug-02 www.vishay.com 5 SI1563DH Vishay Siliconix New Product P-CHANNEL Transfer Characteristics 3.0 3V TC = -55_C 25_C 2.0 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 3.0 VGS = 5 thru 3 .5V 2.5 2.5 I D - Drain Current (A) 2.0 1.5 2V 1.0 1.5 V 1V 0.0 0 1 2 3 4 I D - Drain Current (A) 2.5 V 1.5 125_C 1.0 0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.6 VGS = 1.8 V C - Capacitance (pF) 1.2 120 160 Capacitance r DS(on) - On-Resistance ( W ) Ciss VGS = 2.5 V 0.8 80 VGS = 4.5 V 0.4 40 Coss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 Crss 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 0.9 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) - On-Resistance (W) (Normalized) 4 1.4 VGS = 4.5 V ID = 0.88 A 1.2 2 1.0 1 0.8 0 0.0 0.3 0.6 0.9 1.2 1.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) www.vishay.com 6 Document Number: 71963 S-21483--Rev. A, 26-Aug-02 SI1563DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 2 1.6 Vishay Siliconix P-CHANNEL On-Resistance vs. Gate-to-Source Voltage 1 I S - Source Current (A) r DS(on) - On-Resistance ( W ) TJ = 150_C 1.2 ID = 0.88 A 0.8 TJ = 25_C 0.4 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.30 0.25 0.20 V GS(th) Variance (V) 0.15 0.10 0.05 -0.00 -0.05 -0.10 -0.15 -50 0 0.01 1 Power (W) 3 ID = 100 mA 5 Single Pulse Power, Junction-to-Ambient 4 2 -25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-to-Ambient 10 IDM Limited P(t) = 0.0001 rDS(on) Limited I D - Drain Current (A) 1 P(t) = 0.001 ID(on) Limited 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 dc VDS - Drain-to-Source Voltage (V) Document Number: 71963 S-21483--Rev. A, 26-Aug-02 www.vishay.com 7 SI1563DH Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 PDM 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 8 Document Number: 71963 S-21483--Rev. A, 26-Aug-02 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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